(Seoul=NSP News Agency) soon ki Lee Journalist = Samsung Electronics has developed a D-RAM memory technology based on the next-generation interface Compute Express Link(CXL).
Samsung Electronics has secured the next-generation semiconductor technology leadership through the development of high-capacity, high-bandwidth D-RAM technology that can dramatically improve the performance of data centers such as artificial intelligence, machine learning, and big data.
Samsung Electronics has verified the CXL-based D-RAM memory developed this time on Intel’s platform and secured the base technology for the large-capacity D-RAM solution required by the next-generation data center.
Samsung Electronics applied EDSFF(Enterprise & Data Center SSD Form Factor) form factor, which is applied to large-capacity SSDs, to CXL D-RAM. CXL D-RAM can coexist with the main D-RAM of the existing system and expand the memory capacity of the system to terabytes.
The newly developed CXL D-RAM controller supports error management that minimizes the errors in Memory Mapping, Interface Converting technologies, and the system and that can improve the reliability of data so that the computing system can use DDR D-RAM and CXL D-RAM, main memories with different interfaces together.
Samsung Electronics plans to commercialize CXL-based memory in a timely manner in line with the next-generation computing market that requires large-capacity memory.
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