(Seoul=NSP News Agency) danbi kim Journalist = Samsung Electronics has started mass production of 14nm DRAM using EUV (Extreme Ultra-Violet).
By applying five EUV layers to its 14nm, it has achieved its highest bit density while improving the overall wafer productivity by approximately 20 percent. The 14nm process helps bringing down power consumption by nearly 20 percent compared to the previous process DRAM.
Samsung Electronics applies its new technology to the latest DDR5 (Double Data Rate 5) DRAM.
DDR5 is a next-generation DRAM standard and enables data transfer speeds of up to 7.2 Gbit/s, twice that of DDR4. The demand of 14nm DDR5 grows in data center, supercomputer and enterprise sever applications as the data such as AI, machine learning is advanced.
Samsung Electronics plans to lead the popularization of DDR5 DRAM by realizing a differentiated performance and stable yield based on the industry's most advanced 14-nano technology and highly mature EUV technology.
Samsung Electronics will start mass-production up to 24Gb DRAM, which is the maximum capacity of a single chip, in order to respond to the high-capacity data market.
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