Samsung Electronics, Mass-Producing Industry-leading 12-Nano DRAM
NSP NEWS, By Soon-ki Lee and Bok-hyun Lee
ENX7
(Seoul=NSP NEWS) = Samsung Electronics started mass-producing 16Gb(gigabit) DDR5 DRAM with the industry’s most advanced 12-nano process and solidified its technological competitiveness in the DRAM fine process competition.
Samsung Electronics’ 12-nano D-RAM utilizes cutting-edge technology, improving productivity by about 20% compared to previous generation products.
In addition, power consumption has improved by about 23% compared to the previous generation products. By improving power consumption, it is possible to increase power operation efficiency in operating data centers and the like. DDR5 standard 12-nano DRAM supports the maximum operating speed of 7.2Gbps.
Samsung Electronics’ 12-nano D-RAM utilizes cutting-edge technology, improving productivity by about 20% compared to previous generation products.
In addition, power consumption has improved by about 23% compared to the previous generation products. By improving power consumption, it is possible to increase power operation efficiency in operating data centers and the like. DDR5 standard 12-nano DRAM supports the maximum operating speed of 7.2Gbps.
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It is a speed that can process two 30GB UHD movies in one second. Samsung Electronics plans to continuously expand its 12-nano DRAM lineup to meet customer demand and supply it to various applications such as data centers, artificial intelligence, and next-generation computing.
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