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Samsung Electronics Develops 8th-Gen V-NAND Based Automotive SSD

NSP NEWS, By Eun-young Huh and Jeonghwa Choi

ENX7, Read 0
#Samsung #8th-Gen V-NAND #Automotive SSD
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(Seoul=NSP NEWS AGENCY) = Samsung Electronics has provided key clients with sample units of its industry-leading 256GB storage device, signaling a full-scale expansion into the automotive semiconductor market.

On the 24th, Samsung announced the completion of development for the PCIe 4.0 automotive SSD AM9C1, utilizing its 8th-generation V-NAND technology.

The 256GB SSD offers sequential read and write speeds of 4400MB/s and 400MB/s, respectively, with power efficiency improved by approximately 50% compared to its predecessor, making it optimized for supporting on-device AI functionalities within vehicles. This product features a 5nm-based controller, enhanced board-level reliability assessments, and supports an SLC (Single-Level Cell) mode function. When switched from TLC (Triple-Level Cell) to SLC mode, the read and write speeds increase, enabling faster access to large files within vehicles.
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Furthermore, the SSD meets the automotive semiconductor quality standard AEC-Q100 Grade 2, ensuring stable performance across a wide temperature range from -40°C to 105°C.

To meet the high reliability demands of the automotive semiconductor market, Samsung is also undergoing various certifications for vehicle-specific development and management processes.

Samsung plans to mass-produce the 256GB AM9C1 SSD by the end of this year and expand its product lineup with different capacities to meet the growing demand for high-capacity automotive SSDs. A 2TB solution, the industry's highest capacity based on 8th-generation V-NAND, is expected to enter mass production early next year.
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