(Seoul=NSP NEWS) = Samsung Electronics supplied the world’s first 12-layer HBM4E samples to global customers.

Samsung Electronics applied 10nm-class 6th generation(1c) DRAM and 4nm logic dies to its 12-layer HBM4E product. This ensures both process stability and mass production capability.

Performance has also been improved. The product operates stably at a speed of 14Gbps per pin and can achieve up to 16Gbps. The bandwidth based on a single stack is 3.6TB per second. The 12-layer product offers a 48GB capacity, and there are plans to expand the lineup in the future with 32GB 8-layer and 64GB 16-layer products.

The design and packaging structure have also been refined. Samsung Electronics has improved energy efficiency by 16% and thermal resistance characteristics by more than 14% compared to its predecessor. This measure targets both the heat management and power efficiency required in high-performance AI computing environments.

Starting with this sample supply, the company plans to proceed with mass production supply in accordance with customer schedules. The company intends to respond to HBM customer demand based on a one-stop turnkey system encompassing memory, foundry, system LSI, and advanced packaging.